sop8 plastic-encapsulate mosfets CJ4803A dual p-channel 30-v(d-s) mosfet description the CJ4803A uses advanced trench te chnology to provide excellent r ds(on) . this device is suitable for use as a load switch or in pwm applications. maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -30 gate-source voltage v gs 20 v continuous drain current i d -5 pulsed drain current i dm -30 maximum body- diode continuous current i s -2 a power dissipation p d 0.35 w thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -55 ~+150 sop8 g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c , apr,201 3
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =-250a -30 v gate-source leakage i gss v ds =0v, v gs =20v 100 na zero gate voltage drain current i dss v ds =-30v, v gs =0v -1.0 a gate-source thre shold voltage v gs(th) v ds =v gs , i d =-250a -1.5 -2 -2.5 v v gs =-10v, i d =-5.0a 37 46 drain-source on-sta te resistance r ds(on) v gs =-4.5v, i d =-4a 60 74 m ? forward diode voltage v sd v gs =0v,i s =-1a -0.77 -1 v forward transconductance g fs v ds =-5v, i d =-5a 10 s dynamic parameters input capacitance c iss 830 output capacitance c oss 126 reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 92 pf switching parameters turn-on delay time t d(on) 7.7 rise time t r 6.8 turn-off delay time t d(off) 20 fall time t f v gs =-10v,v ds =-15v, r l =3 ? , r gen =3 ? 10 ns 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c , apr,201 3
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